Semiconductor device, solid-state imaging device, and electric apparatus

ABSTRACT

There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.

CROSS REFERENCES TO RELATED APPLICATIONS

This is a Divisional Application of the patent application Ser. No.12/222,855, filed Aug. 18, 2008, which claims priority from JapanesePatent Application JP 2007-223114 filed in the Japanese Patent Office onAug. 29, 2007, the entire contents of which being incorporated herein byreference.

BACKGROUND OF THE INVENTION

Field of the Invention

The present invention relates to a method of producing a semiconductordevice, a solid-state imaging device, a method of producing an electricapparatus, and an electric apparatus.

Description of the Related Art

Isolation using an impurity diffusion layer is a technology of isolatinga unit pixel in a solid-state imaging device such as a CCD imagingdevice. When an n-type photosensor including a photodiode forms a unitpixel, a lattice-shaped p-type impurity diffusion layer is formed as anelement isolation region isolating unit pixels from one other. Such anelement isolation region is formed by ion implantation between unitpixels through an ion implantation mask.

A unit pixel has been reduced in size in recent years. Accordingly, inorder to increase a photosensor area for increasing an amount of lightincident on each photosensor and increasing sensitivity of an imagingdevice, a deep and narrow element isolation region is demanded.

A certain amount of ion implantation energy may be necessary to ionimplant an impurity between unit pixels and form a deep elementisolation region. This increases an aspect ratio which may be necessaryto form an opening in an ion implantation mask (hereinafter II mask).Currently, an II mask structure having a desired high aspect ratio maynot be obtained using a photoresist as a mask material. Therefore, RIE(reactive ion etching) is typically used to form an II hard mask of SiO₂having a desired structure.

FIGS. 1A to 1C are schematic process views of a method of producing asolid-state imaging device using an II hard mask in the related art.This example illustrates a schematic process of forming an elementisolation region in a solid-state imaging device, where the elementisolation region is formed by ion implantation.

First, as shown in FIG. 1A, an SiN film (hereinafter P—SiN film) 21 byplasma CVD (chemical vapor deposition), an SiO₂ film 22 and a resistmask 23 are formed on a surface of an Si substrate 20 with an n-typephotosensor formed thereon, for example. Here, the photosensor formed onthe Si substrate 20 is not shown. The P—SiN film 21 formed on the Sisubstrate 20 is used as a stopper layer, and the SiO₂ film 22 is used asan II hard mask. The SiO₂ film 22 forms an II hard mask having a highaspect ratio and thus has a thickness of 5 μm, for example. The resistmask 23 is formed as a pattern having a slit-like opening 25 formed bypattern exposure and development. Here, the opening 25 is formed to havea width of 0.5 μm, for example.

Next, as shown in FIG. 1B, the SiO₂ film 22 is etched through theopening 25 of the resist mask 23 to form an II hard mask 26 having ahigh aspect ratio.

Next, as shown in FIG. 1C, a p-type impurity, for example, is ionimplanted into the Si substrate 20 through the II hard mask 26 having ahigh aspect ratio and thermally diffused to form an element isolationregion 24. Since an impurity is ion implanted into the Si substrate 20through the II hard mask 26 having a high aspect ratio, a narrow anddeep p-type diffusion region may be formed as the element isolationregion 24.

In addition to a demand for a pixel reduced in size, an elementisolation region is also demanded to be narrow, and therefore an II hardmask opening is demanded to be as narrow as 0.3 μm or less. FIGS. 2A to2C show a schematic configuration of a solid-state imaging device havingan II hard mask having an aspect ratio of 20, for example. In FIGS. 2Ato 2C, parts corresponding to those of FIG. 1 are indicated by the samesymbols and repeated description thereof is omitted. In the case offorming the II hard mask 26 as shown in FIGS. 1A to 1C, it is difficultto vertically process the SiO₂ film by RIE when the aspect ratio reachesabout 20. In this case, the II hard mask 26 may not have an idealvertical shape as shown in FIG. 2A but has a tapered shape as shown inFIG. 2B or a bowing shape as shown in FIG. 2C. When the opening of theII hard mask 26 has a tapered or bowing shape, ion implantation isperformed in accordance with a widest width of the opening shape.Therefore, distribution of an impurity diffusion layer is wider than adesired distribution indicated by a broken line as shown in FIG. 2B or2C. Accordingly, in the solid-state imaging device, the elementisolation region 24 becomes wider than the desired distribution regionindicated by the broken line and narrows an adjacent photosensor region(not shown), so that sensitivity of the imaging device to incident lightis decreased, disadvantageously.

Japanese Unexamined Patent Application Publication No. 9-162137discloses an ion implantation method including reducing a size of anopening on a lower edge of the opening of a mask pattern by reflowing tocontrol a minute area of an ion implantation region and then implantingions in a desired position.

SUMMARY OF THE INVENTION

However, a mask pattern formed of a resist layer described in JapaneseUnexamined Patent Application Publication No. 9-162137 has an openingwidth of 1 μm and a thickness of 1 to 2 μm and has a low aspect ratio.Accordingly, deep ion implantation may not be expected.

As described above, when a hard mask having a large thickness is used toperform deep ion implantation, it is difficult to accurately form a maskpattern having a smaller opening width, and therefore desirable ionimplantation into a narrow region may not be achieved,disadvantageously.

In view of the aforementioned points, it is desirable to provide amethod of producing a semiconductor device including a narrow and deepimpurity region and a solid-state imaging device including the same.Further, it is desirable to provide a method of producing an electricapparatus including a narrow and deep impurity region and an electricapparatus including the same.

According to an embodiment of the present invention, there are provideda method of producing a semiconductor device and a method of producingan electric apparatus. Each of the methods includes the steps of:forming a first hard mask having an opening above a substrate; forming asacrificial film above a side surface of the opening of the first hardmask; forming a second hard mask in the opening having the sacrificialfilm above the side surface; removing the sacrificial film after thesecond hard mask is formed; ion implanting a first conductivity-typeimpurity through the first hard mask; and ion implanting a secondconductivity-type impurity through the first and second hard masks.

In a method of producing a semiconductor device and a method ofproducing an electric apparatus according to an embodiment of thepresent invention, a sacrificial film is formed above a side surface ofan opening of a first hard mask, a second hard mask is formed and thenthe sacrificial film is removed, so that the second hard mask may beformed by self-alignment.

According to an embodiment of the present invention, there are provideda solid-state imaging device and an electric apparatus, each including aunit pixel having a second conductivity-type photosensor and a firstconductivity-type element isolation region having both edges covered bya second conductivity-type impurity and isolating the unit pixel.

In a solid-state imaging device and an electric apparatus according toan embodiment of the present invention, both edges of a firstconductivity-type element isolation region are covered by a secondconductivity-type impurity, so that the element isolation region may notbecome widened and accordingly a photosensor is not narrowed.

In a method of producing a semiconductor device and a method ofproducing an electric apparatus according to an embodiment of thepresent invention, first and second hard masks are used, so that animpurity region is narrowed and a deep impurity region is formed, in thecase of using a mask having a high aspect ratio.

In a solid-state imaging device and an electric apparatus according toan embodiment of the present invention, both edges of a firstconductivity-type element isolation region are covered by a secondconductivity-type impurity, so that the element isolation region isfinally formed as a deep and narrow region and it is possible tosuppress a decrease in sensitivity due to reduction of a photosensor insize.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are schematic process views of a method of forming anelement isolation region in a solid-state imaging device of the relatedart.

FIG. 2A shows an example of an ideal shape of an element isolationregion when using an II hard mask having an opening with a high aspectratio in a solid-state imaging device, and

FIGS. 2B and 2C show an example of a defective shape of the elementisolation region.

FIGS. 3A to 3D are schematic process views (1) showing a method ofproducing a semiconductor device according to a first embodiment of thepresent invention.

FIGS. 4E to 4G are schematic process views (2) showing a method ofproducing a semiconductor device according to a first embodiment of thepresent invention.

FIGS. 5A to 5C are schematic process views (1) showing a method ofproducing a semiconductor device according to a second embodiment of thepresent invention.

FIGS. 6D to 6F are schematic process views (2) showing a method ofproducing a semiconductor device according to a second embodiment of thepresent invention.

FIGS. 7G to 7I are schematic process views (3) showing a method ofproducing a semiconductor device according to a second embodiment of thepresent invention.

FIG. 8 is a schematic cross-sectional view of a solid-state imagingdevice according to a third embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of a camera according to anembodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will be described below withreference to the drawings.

FIGS. 3A to 3D show schematic process in a method of producing asemiconductor device according to a first embodiment of the presentinvention. The present embodiment is an example where a p-type impurityregion is formed by ion implantation in a semiconductor device.

First, as shown in FIG. 3A, a P—SiN film 2, an SiO₂ film 3 and a resistmask 4 are formed on a surface of a substrate 1 formed of Si or thelike. The P—SiN film 2 is used as a stopper layer, and the SiO₂ film 3is used as a hard mask. The P—SiN film 2 is formed to have a thicknessof about 0.3 μm. The SiO₂ film 3 forms a hard mask having a high aspectratio and is therefore formed to have a thickness of 5 μm, for example.The resist mask 4 is formed as a pattern having a slit-like opening 5 bypattern exposure and development. Here, an opening width (hereinaftergap length 5 a) of 0.5 μm is formed, for example. The gap length 5 a isformed wider than a width of an impurity region intended to be finallyformed in the present embodiment.

Next, as shown in FIG. 3B, the SiO₂ film 3 is etched through the opening5 of the resist mask 4 to form a first hard mask 6 having an aspectratio of about 10. Since the gap length 5 a is wider than the desiredwidth of the impurity region, the opening 5 in the first hard mask 6 hasan aspect ratio lower than a desired aspect ratio. After forming thefirst hard mask 6 by etching, the resist mask 4 is removed by ashing. Inthe present embodiment, the resist mask 4 is removed. However, it ispossible to perform a next step without removing the resist mask 4.

Then, a first conductivity-type p-type impurity is ion implanted intothe substrate 1 through the first hard mask 6, for example, to form afirst conductivity-type impurity region 7.

One example of ion implantation conditions in the present embodiment isshown below.

<Apparatus Used>

Ion beam source

<Conditions>

Dopant: boron

Acceleration voltage: 2.5 MeV

Next, as shown in FIG. 3C, a sacrificial film 8 is deposited in order toreduce the gap length 5 a of the first hard mask 6. A shrinking agentused as a material for the sacrificial film 8 may be a material havingexcellent releasability and a high selective etching rate to a materialof the first hard mask 6 during release and having an excellent coverageon a side wall of the first hard mask 6, that is, having an excellentside wall coverage. For example, the shrinking agent may be polyethyleneor a polymer containing fluorocarbon (C_(x)F_(y)) deposited by PVD(physical vapor deposition) or CVD using gas of C_(x)H_(y) such as CH₄or C₂H₄ as raw material gas. Specific examples of the shrinking agentinclude CFx (plasma CVD film, Tokyo Electron Ltd.). It is also possibleto use a shrinking agent deposited as one layer along an opening patternby coating. A sacrificial film having a uniform thickness along anopening pattern may be deposited by CVD or PVD.

In the present embodiment, a fluorocarbon polymer easily releasable isused as the sacrificial film 8 and is deposited to have a thickness of100 nm on the side wall of the first hard mask 6 in an inductivelycoupled plasma apparatus.

One example of deposition conditions in the present embodiment is shownbelow.

<Apparatus Used>

Inductively coupled plasma apparatus

<Conditions>

Pressure: 50 mTorr

Gas used and flow rate: C₅F₈/Ar=10/500 sccm

Power: 1000 W

Deposition time: 60 s

Thereafter, as shown in FIG. 3D, the sacrificial film 8 is depositedonly on the side wall of the first hard mask 6 by etching back. Thefirst hard mask 6 has a gap length 5 b of about 300 nm.

Subsequently, as shown in FIG. 4E, a material layer such as an SOG(spin-on-glass) oxide film is deposited in a reduced gap (300 nm) of thefirst hard mask 6, and then a second hard mask 9 is formed by etchingback. A material for the second hard mask 9 is preferably a materialhaving high etching resistance during release of the sacrificial film 8and excellent embeddability. Examples of the material includemetal-containing siloxy acid such as TiO, in addition to theaforementioned SOG oxide film. The second hard mark 9 formed of such amaterial is deposited by CVD or SOG.

In the present embodiment, an SOG oxide film having excellentembeddability is deposited as the second hard mask 9 by embeddingcoating.

One example of deposition conditions in the present embodiment is shownbelow.

<Apparatus Used>

Spin coater

<Conditions>

Number of revolutions: 1500 rpm

Treatment time: 10 s

Then, as shown in FIG. 4F, the sacrificial film 8 formed in a step shownin FIG. 4E is removed by plasma ashing or the like.

One example of ashing conditions in the present embodiment is shownbelow.

<Apparatus Used>

Inductively coupled ashing

<Conditions>

Pressure: 20 mTorr

Gas used and flow rate: N₂/O₂=400/50 sec

ICP power: 700 W

Treatment time: 300 s

The sacrificial film 8 is removed to form the second hard mask 9 byself-alignment. The second hard mask 9 is formed so that a new opening10 is formed between the first hard mask 6 and the second hard mask 9.That is, the first and second hard masks 6 and 9 form a self-aligned IIhard mask having an opening on an edge of the first conductivity-typeimpurity region 7.

Then, as shown in FIG. 4G, a second conductivity-type impurity such asan n-type impurity is ion implanted using the first and second hardmasks 6 and 9 forming the opening 10 exposing the edge of the p-typeimpurity region.

One example of ion implantation conditions in the present embodiment isshown below.

<Apparatus Used>

Ion beam source

<Conditions>

Dopant: phosphorus

Acceleration voltage: 3.0 MeV

The first and second hard masks 6 and 9 are used as described above toform a compensation region 11 where each edge of the firstconductivity-type impurity region 7 is covered by the secondconductivity-type impurity. The compensation region 11 is formed of thesecond conductivity-type impurity such as the n-type impurity, so thatthe p-type first conductivity-type impurity region 7 is narrowed and thedesired narrow and deep first conductivity-type impurity region 7 isformed.

According to the present embodiment, a thickness of a hard mask may besufficiently ensured, making it possible to perform deeper ionimplantation.

In a first hard mask, an opening is formed having an aspect ratio lowerthan a high aspect ratio originally necessary for an opening, making itpossible to prevent a defective opening shape caused by formation of anopening pattern having a high aspect ratio and to stably form animpurity region. Further, a second hard mask may be formed byself-alignment and a compensation dopant may be implanted from anopening 10 formed by the first and second hard masks. Therefore, an edgeof an impurity region formed of the first hard mask is covered and anarrow impurity region may be formed.

Next, FIGS. 5A to 6F show a schematic process in a method of producing asemiconductor device according to a second embodiment of the presentinvention.

As in the first embodiment, the present embodiment is an example wherean impurity region in a semiconductor device is formed by ionimplantation.

First, as shown in FIG. 5A, a P—SiN film 2, an SiO₂ film 3 and a resistmask 4 are formed on a surface of a substrate 1 formed of Si or thelike. The P—SiN film 2 is used as a stopper layer, and the SiO₂ film 3is used as a hard mask. The P—SiN film 2 is formed to have a thicknessof about 0.3 μm. The SiO₂ film 3 forms a hard mask having a high aspectratio and is therefore formed to have a thickness of 5 μm, for example.In the resist mask 4, a resist mask pattern having a slit-like opening 5is formed by exposure. Here, an opening width (hereinafter gap length 5a) of 0.5 μm is formed, for example. The gap length 5 a is formed widerthan a width of an impurity region intended to be finally formed in thepresent embodiment.

Next, as shown in FIG. 5B, the SiO₂ film 3 is etched through the resistmask 4 to form a first hard mask 6 having the opening 5 with an aspectratio of about 10. Since the gap length 5 a is wider than the desiredwidth of the impurity region, the opening 5 in the first hard mask 6 hasan aspect ratio lower than a desired aspect ratio. After forming thefirst hard mask 6 by etching, the resist mask 4 is removed by ashing orthe like. In the present embodiment, the resist mask 4 is removed.However, it is possible to perform a next step without removing theresist mask 4.

Next, as shown in FIG. 5C, a sacrificial film 8 is deposited in order toreduce the gap length 5 a of the first hard mask 6. As in the firstembodiment, a shrinking agent used as a material for the sacrificialfilm 8 may be a material having excellent releasability and a highselective etching rate to a material of the first hard mask 6 duringrelease and having an excellent coverage on a side wall of the firsthard mask 6, that is, having an excellent side wall coverage. Forexample, the shrinking agent may be a polyethylene polymer deposited byPVD or CVD using gas of C_(x)H_(y) such as CH₄ or C₂H₄ as raw materialgas. It is also possible to use a shrinking agent deposited as one layeralong an opening pattern by coating. Specific examples of the shrinkingagent include CFx (plasma CVD film, Tokyo Electron Ltd.).

In the present embodiment, a fluorocarbon polymer easily releasable isdeposited to have a thickness of 100 nm on the side wall of the firsthard mask 6 in an inductively coupled plasma apparatus.

One example of deposition conditions in the present embodiment is shownbelow.

<Apparatus Used>

Inductively coupled plasma apparatus

<Conditions>

Pressure: 50 mTorr

Gas used and flow rate: C₅F₈/Ar=10/500 sccm

Power: 1000 W

Deposition time: 60 s

Thereafter, as shown in FIG. 6D, the sacrificial film 8 is depositedonly on the side wall of the first hard mask 6 by etching back. Thefirst hard mask 6 has a gap length 5 b of 300 nm.

Subsequently, as shown in FIG. 6E, a material such as TiN is depositedin a reduced gap with the length 5 b (300 nm) of the first hard mask 6,and a second hard mask 9 is formed by etching back. A material for thesecond hard mask 9 is preferably a material having high etchingresistance during release of the sacrificial film 8, excellentembeddability and high adhesion to an insulating film. Examples of thematerial include metal-containing siloxy acid such as TiO, in additionto the aforementioned TiN. The second hard mark 9 formed of such amaterial as TiN or metal-containing siloxy acid like TiO is deposited byCVD or SOG.

In the present embodiment, the second hard mask 9 is deposited using amaterial differing in material characteristics from the first hard mask6. That is, the second hard mask 9 is deposited using a material havinga high selective etching rate to a material such as SiO₂ forming thefirst hard mask when the second hard mask 9 is removed using a chemicalas later described.

In the present embodiment, TiN differing in material characteristicsfrom SiO₂ used for the first hard mask 6 is deposited by embeddingcoating.

One example of deposition conditions in the present embodiment is shownbelow.

<Apparatus Used>

Sputtering deposition apparatus

<Conditions>

Target: TiN

Pressure: 5 mTorr

Gas used and flow rate: Ar/N₂=30/80 sccm

DC: 8 kW

Temperature: 150° C.

Deposition time: 10 min

Then, as shown in FIG. 6F, the sacrificial film 8 formed in a step shownin FIG. 6E is removed by plasma ashing, for example.

One example of ashing conditions in the present embodiment is shownbelow.

<Apparatus Used>

Inductively coupled ashing apparatus

<Conditions>

Pressure: 20 mTorr

Gas used and flow rate: N₂/O₂=400/50 sec

ICP power: 700 W

Treatment time: 300 s

The sacrificial film 8 is removed, so that the second hard mask 9 isformed by self-alignment and an opening 10 is formed between the firsthard mask 6 and the second hard mask 9.

Subsequently, as shown in FIG. 7G, a second conductivity-type impurityfor compensation is ion implanted as a dopant through the opening 10formed by the first and second hard masks 6 and 9. In the presentembodiment, a first conductivity-type impurity is a p-type impurity, andphosphorus is used as the n-type impurity for compensation, for example.

One example of ion implantation conditions in the present embodiment isshown below.

<Apparatus Used>

Ion beam source

<Conditions>

Dopant: phosphorus

Acceleration voltage: 3.0 MeV

In this manner, a compensation region 11 is previously formed in asubstrate 1 at a position corresponding to the opening 10 formed by thefirst and second hard masks 6 and 9.

Next, as shown in FIG. 7H, the second hard mask 9 is removed by achemical. The chemical used only removes the second hard mask 9 and doesnot remove the first hard mask 6.

A chemical removal condition in the present embodiment is shown below.

<Chemical Used>

H₂O=50 ml, HCl_((1.19))=50 ml

Then, as shown in FIG. 7I, the first conductivity-type impurity such asthe p-type impurity is ion implanted as a dopant through the opening 5having a gap length widened again in the first hard mask 6. Phosphorusis used as the p-type impurity, for example.

One example of ion implantation conditions in the present embodiment isshown below.

<Apparatus Used>

Ion beam source

<Conditions>

Dopant: boron

Acceleration voltage: 2.5 MeV

The first conductivity-type impurity such as the p-type impurity is ionimplanted from the opening 5 of the first hard mask, so that a regioncorresponding to the opening 5 in the substrate 1 is doped with thep-type impurity to form a first conductivity-type impurity region 7.Here, in the present embodiment, as shown in FIG. 7I, an edge of thefirst conductivity-type impurity region 7 doped with the firstconductivity-type impurity such as the p-type impurity is previouslydoped with the second conductivity-type impurity such as the n-typeimpurity in the aforementioned step to form the compensation region 11.Therefore, the substantial first conductivity-type impurity region 7 isan area of the p-type impurity doped region other than both edgesthereof. The desired narrow and deep first conductivity-type impurityregion 7 may be formed in this manner.

According to the present embodiment, an impurity region is formed usinga hard mask having an aspect ratio lower than that of a hard mask havinga high aspect ratio which is used for forming an impurity region havinga desired width and a desired depth. Then, a compensation region isformed on each edge of the impurity region using a self-aligned hardmask, so that a desired impurity region may be formed. Therefore, it ispossible to prevent expansion of an impurity region due to a defectiveshape of a hard mask of the related art having a high aspect ratio andto stably form a narrow and deep impurity region.

In a related art method of forming an impurity region by ionimplantation using a hard mask having a high aspect ratio, it isdifficult to accurately form a desired impurity region when the impurityregion is reduced in size.

According to the aforementioned first and second embodiments, since acompensation region is formed on an edge, a narrow and deep impurityregion may be formed with accuracy when the impurity region is reducedfurther in size. It is assumed that accuracy in distribution of thecompensation region has only a small influence on performance of theimpurity region. That is, even if the compensation region is formedslightly wider, the impurity region may exhibit its performancesufficiently. Therefore, the compensation region may have a considerableeffect of making the impurity region narrow.

A method of producing a semiconductor device where the narrow and deepimpurity region of the present embodiment is formed may be applied whenforming an element isolation region in a solid-state imaging device suchas a CCD solid-state imaging device or CMOS image sensor, for example.

FIG. 8 shows a cross-sectional structure of a main part of a solid-stateimaging device according to a third embodiment of the present invention.The present embodiment is an example where an element isolation regionis formed in a CCD solid-state imaging device or the like, using themethod of forming an impurity region according to the first or secondembodiment.

A solid-state imaging device 101 of the present embodiment is a CCDsolid-state imaging device having a photosensor 103 with an HAD (holeaccumulated diode) structure. For example, a semiconductor substrate 120formed of Si has a first p-type well region 112 formed on an n-typesubstrate 111. An n-type low impurity concentration region 113 is formedon the first p-type well region 112. Further, a photodiode 114 having acharge accumulation region (p⁺ accumulation region) 115 formed on itssurface is arranged in a vertical direction and a horizontal directionin matrix. Each pixel of the photosensor 103 is formed in this manner.

A second p-type well region 123 is formed at a necessary distance fromthe photosensor 103, that is, the photodiode 114 arranged on a commonvertical line. An n-type charge transfer region (transfer channelregion) 124 is formed on the second p-type well region 123 to form avertical charge transfer part 105.

A p-type signal charge reading region 122 is formed between the verticalcharge transfer part 105 and the corresponding photodiode 114 to form areading part 104. An element isolation part 107 is formed by a p-typeelement isolation region 125 between adjacent different verticaltransfer parts. A unit pixel 102 is formed by one photosensor 103, onereading part 104, one vertical charge transfer part 105 and one elementisolation part 107.

A compensation region 100 is formed on an edge of the p-type elementisolation region 125 according to the present embodiment. The elementisolation region 125 is accurately formed as a narrow region and may notinterfere with a region of the photodiode 114.

A light transmissive insulating film 116 is formed of SiO₂ or the likeon a surface of the semiconductor substrate 120. A thermally resistantvertical transfer electrode 117 is formed of polycrystalline silicon onthe insulating film 116 over the charge transfer region 124 and thereading region 122.

Further, a light shielding film 119 is formed on the whole surface ofthe vertical transfer electrode 117 through an insulating interlayer 118of SiO₂ or the like.

An opening 134 is formed in the light shielding film 119 to expose thephotosensor 103. Light is received by the photosensor 103 through theopening 134, and signal charges are generated in the photodiode 114 inaccordance with an amount of light received.

In the CCD solid-state imaging device 101, signal charges arephotoelectrically converted and accumulated in each photosensor 103,read to each corresponding vertical charge transfer part 105 through thereading part 104, transferred in the vertical charge transfer part 105to a horizontal charge transfer part (not shown) for each horizontalline, further transferred in the horizontal charge transfer part in onedirection, voltage-converted through an output circuit and output.

According to the solid-state imaging device 101 formed of CCD or thelike of the present embodiment, the compensation region 100 is formed onan edge of the element isolation region 125 facing the photodiode 114,so that the element isolation region 125 is not widened, that is, aregion of the photodiode 114 is not narrowed. With a pixel being reducedin size, the element isolation region 125 is also reduced in size.However, in the CCD solid-state imaging device 101 of the presentembodiment, when the element isolation region is formed, thecompensation region 100 is formed on an edge of the region, making itpossible to accurately form the desired narrow and deep elementisolation region 125. This suppresses a decrease in sensitivity due toreduction of the photosensor 103 in size.

FIG. 9 is a schematic cross-sectional view of a camera according to anembodiment of the present invention. The camera according to theembodiment is a video camera capable of capturing still images or movingimages, for example.

As shown in FIG. 9, the camera according to the embodiment includes asolid-state imaging device 101 such as a CCD, a CMOS sensor or a CMDaccording to an embodiment of the present invention, an optical system510, a mechanical shutter device 511, and a signal processing circuit512.

The optical system 510 is configured to form an image of light (incidentlight) from an object on an imaging screen of the solid-state imagingdevice 101. As a result, a signal electric charge is accumulated in thesolid-state imaging device 101 for a specific period.

The mechanical shutter device 511 is configured to control a lightirradiation period and a light shaded period for the solid-state imagingdevice 101.

The signal processing circuit 512 performs various kinds of signalprocessing. Processed image signals are stored in a storage medium suchas a memory or output to a display.

In the above-described embodiment, for example, the solid-state imagingdevice 101 includes unit pixels arranged in a matrix form. The unitpixels are arranged to detect a signal charge as physical value inresponse to an amount of visible light. However, an embodiment of thepresent invention is not limited to the solid-state imaging device 101.According to an embodiment of the present invention, a solid-stateimaging device may be any of solid-state imaging devices includingcolumn circuits arranged for respective columns of pixels in a pixelarray section.

According to an embodiment of the present invention, a solid-stateimaging device may be a solid-state imaging device capturing an image bydetecting distribution of an amount of incident visible light or asolid-state imaging device capturing an image by detecting distributionof an amount of incident infrared light, x-rays, particles or the like.In addition, in a broad sense, according to an embodiment of the presentinvention, a solid-state imaging device may be a solid-state imagingdevice (physical quantity distribution detector) such as a fingerprintsensor that detects distribution of a pressure, capacitance or otherphysical values to capture an image.

According to an embodiment of the present invention, a solid-stateimaging device may be a solid-state imaging device in which each row ofunit pixels is sequentially scanned in a pixel array section to readpixel signal's from the respective unit pixels or an X-Y address typesolid-state imaging device in which any pixel can be selectedindependently to read a pixel signal from that pixel.

Further, a solid-state imaging device according to an embodiment of thepresent invention may be formed as one chip, or formed as an imagingfunction module in which an imaging part and a signal processing partare packaged or an imaging part and an optical system are packaged.

Further, according to an embodiment of the present invention, inaddition to solid-state imaging devices, imaging apparatuses areprovided. Such imaging apparatuses include a camera system such as adigital still camera, video camera or the like, and an electricapparatus such as a mobile phone unit having an imaging function. Animaging apparatus may be a module, that is, a camera module as describedabove mounted in such an electric apparatus.

The above-described solid-state imaging device 101 may be used as asolid-state imaging device in such a digital still camera, a videocamera, a camera module for portable equipment such as a mobile phoneunit, so that an excellent image can be obtained with a simplifiedconfiguration of the solid-state imaging device 101.

In the above-described embodiment, a CCD solid-state imaging device isdescribed as an example of the solid-state imaging device 101 having theelement isolation region 125 with the compensation region 100 providedon an edge thereof. However, the element isolation region 125 with thecompensation region 100 provided on the edge thereof may also be usedfor a CMOS image sensor or the like. A solid-state imaging deviceaccording to an embodiment of the present invention is not limited tothe aforementioned embodiments, and it should be understood that variouschanges and modifications are possible without departing from the scopeof the present invention in terms of materials, shapes andconfigurations of an element isolation region and a compensation region,for example.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A solid-state imaging device comprising: a narrowregion of a first conductivity-type in physical contact with aninsulating film, said insulating film being on a surface of asemiconductor substrate; a compensation region in physical contact withsaid narrow region, an impurity of a second conductivity-type withinsaid compensation region being at least at said surface of thesemiconductor substrate; and an accumulation region of the firstconductivity-type between a photodiode of the second conductivity-typeand said insulating film, a portion of the compensation regionoverlapping a portion of the accumulation region.
 2. A solid-stateimaging device according to claim 1, wherein said accumulation region isin physical contact with said insulating film.
 3. A solid-state imagingdevice according to claim 1, wherein said compensation region is inphysical contact with said insulating film.
 4. A solid-state imagingdevice according to claim 1, wherein said insulating film is a lighttransmissive insulating film.
 5. A solid-state imaging device accordingto claim 1, wherein said narrow region and said compensation region arein physical contact with said insulating film, said insulating filmbeing in physical contact with said accumulation region.
 6. Asolid-state imaging device according to claim 1, wherein said photodiodeis configured to convert light into a signal charge, an amount of thesignal charge being in accordance with an amount of the light incidentupon said accumulation region.
 7. A solid-state imaging device accordingto claim 1, further comprising: a low impurity concentration region ofthe second conductivity-type between a first well region of the firstconductivity-type and said insulating film, said first well region beingbetween said low impurity concentration region and a portion of thesubstrate.
 8. A solid-state imaging device according to claim 7, whereinsaid compensation region and said accumulation region are in physicalcontact with said photodiode, said photodiode being in physical contactwith said low impurity concentration region.
 9. A solid-state imagingdevice according to claim 7, wherein said portion of the substrate is ofthe second conductivity-type.
 10. A solid-state imaging device accordingto claim 7, wherein said narrow region is between said insulating filmand said low impurity concentration region.
 11. A solid-state imagingdevice according to claim 7, wherein said narrow region is in physicalcontact with said low impurity concentration region.
 12. A solid-stateimaging device according to claim 7, wherein said first well region isin physical contact with said low impurity concentration region.
 13. Asolid-state imaging device according to claim 7, wherein said narrowregion is in physical contact with said insulating film and said lowimpurity concentration region.
 14. A solid-state imaging deviceaccording to claim 7, wherein an impurity concentration of the secondconductivity-type in said photodiode is greater than an impurityconcentration of the second conductivity-type in said low impurityconcentration region.
 15. A solid-state imaging device according toclaim 7, further comprising: a charge transfer region of the secondconductivity-type between a second well region of the firstconductivity-type and said insulating film, said second well regionbeing in physical contact with said charge transfer region and said lowimpurity concentration region.
 16. A solid-state imaging deviceaccording to claim 15, wherein said insulating film is in physicalcontact with said charge transfer region.
 17. A solid-state imagingdevice according to claim 15, further comprising: a signal chargereading region of the first conductivity-type between said insulatingfilm and said low impurity concentration region, said signal chargereading region being in physical contact with said insulating film andsaid low impurity concentration region.
 18. A solid-state imaging deviceaccording to claim 17, wherein a first conductivity-type impurityconcentration in the accumulation region is greater than a firstconductivity-type impurity concentration in the signal charge readingregion.
 19. A solid-state imaging device according to claim 17, whereinsaid first conductivity-type impurity concentration in the signal chargereading region is less than a first conductivity-type impurityconcentration in the narrow region.
 20. A solid-state imaging deviceaccording to claim 17, wherein said signal charge reading region is inphysical contact with said accumulation region and said photodiode. 21.A solid-state imaging device according to claim 17, wherein said signalcharge reading region is in physical contact with said charge transferregion and said second well region.
 22. A solid-state imaging deviceaccording to claim 17, wherein said signal charge reading region isbetween said accumulation region and said charge transfer region.
 23. Asolid-state imaging device according to claim 17, wherein said signalcharge reading region is between said accumulation region and saidcharge transfer region.
 24. A solid-state imaging device according toclaim 17, wherein said signal charge reading region is in physicalcontact with said accumulation region and said charge transfer region.25. A solid-state imaging device according to claim 1, wherein saidfirst conductivity-type is p-type, said first conductivity-type being ofa conductivity that is opposite to said second conductivity-type.
 26. Asolid-state imaging device according to claim 1, wherein said secondconductivity-type is n-type, said second conductivity-type being of aconductivity that is opposite to said first conductivity-type.